| 发明名称 |
Optoelectronic semiconductor devices |
| 摘要 |
An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum. Photodetector devices are also described |
| 申请公布号 |
GB9622145(D0) |
申请公布日期 |
1996.12.18 |
| 申请号 |
GB19960022145 |
申请日期 |
1996.10.24 |
| 申请人 |
UNIVERSITY OF SURREY |
发明人 |
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| 分类号 |
H01L31/103;H01L31/068;H01L31/107;H01L31/108;H01L33/00;H01L33/34 |
主分类号 |
H01L31/103 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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