发明名称 Method of making a semiconductor type gas flow sensor
摘要 Disclosed is a semiconductor type gas flow sensor for sensing a change of gas flow by means of thermo-sensitive resistor elements, comprising two semiconductor substrates, at least one having an etched therein groove for forming gas path and both being placed on each other and joined together to form a gas path therein, characterized in that said semiconductor substrates being at their joinable surfaces covered with soldering films of dissimilar metals able to be alloyed by heating and they are placed on each other and heated in pressed state to form therebetween an alloyed metal joint without causing any reverse affection of soldering temperature to the thermosensitive resistor elements placed in the gas path. <IMAGE>
申请公布号 EP0528251(B1) 申请公布日期 1996.12.18
申请号 EP19920113240 申请日期 1992.08.03
申请人 HONDA GIKEN KOGYO KABUSHIKI KAISHA 发明人 HOSOI, TAKASHI;HIROSE, YOSHITSUGU;YAMAKAWA, HIROSHI
分类号 G01C19/00;G01F1/684;G01P5/10 主分类号 G01C19/00
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