发明名称 IMPROVED CHARGE PUMP CIRCUIT FOR HIGH-TENSION SIDE SWITCH
摘要 PROBLEM TO BE SOLVED: To provide a charge pump circuit as a high voltage side switch of low noise and high efficiency which can be easily integrated in an integrated circuit together with an MOS gate control power device. SOLUTION: This charge pump circuit consists of the following; a power MOSFET 32 supplying a power supply voltage Vcc to a connected load when it is turned on, a charge pump circuit 40 which outputs a voltage higher than the power supply voltage Vcc to the gate of a power MOSFET 32 and makes it turn on, and a constant current source 53 which is connected between the charge pump circuit 40 and a connection node 52 and makes the reference potential of the charge pump circuit to float.
申请公布号 JPH08336277(A) 申请公布日期 1996.12.17
申请号 JP19960088025 申请日期 1996.04.10
申请人 INTERNATL RECTIFIER CORP 发明人 BURUUNO SE NATSUDO
分类号 H01L27/04;H01L21/822;H01L29/78;H02M3/07;H03K17/06;H03K17/16 主分类号 H01L27/04
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