| 摘要 |
PURPOSE: To provide a device for producing semiconductor capable of enhancing the yield of the items to be treated by improving the flattening of a filmed portion to be formed on an item to be treated such as semiconductor wafer. CONSTITUTION: This is a semiconductor production device 1 comprising a film treatment portion 3 for forming a BPSG film on semiconductor wafer by CVD treatment, an anneal treatment portion 4 for heating and treating the semiconductor wafer after supplying an inert gas 9 such as N2 gas and film treatment, and a carrying portion 6 equipped with a carrying mechanism for carrying semiconductor wafer between both of them which is installed between the film treatment portion 3 and the anneal treatment portion 4. This equipment gives a film treatment to the semiconductor wafer, and also performs the transport of the semiconductor wafer in the inert gas atmosphere at the carrying portion 6 installed between both the treatment portions when giving the anneal treatment to the semiconductor wafer after film treatment. |
