Semiconductor laser device with a misoriented substrate

摘要

A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9 DEG to 17 DEG from a {100} plane of the substrate in a <011> direction, and the cavity length is not less than 150 mu m nor more than 300 mu m.