发明名称 Solar cell and production process therefor
摘要 In order to provide a low cost solar cell which has a high quality, little stressed polycrystalline silicon semiconductor layer of large crystal sizes on a low cost metal substrate and to provide a production process therefor, the solar cell has a metal layer, a metal oxide layer, and a polycrystalline silicon semiconductor layer formed in this order on the substrate, and the production process therefor comprises a step of depositing the metal layer on the substrate, a step of depositing the metal oxide layer on the metal layer, a step of depositing the semiconductor layer on the metal oxide layer, a step of depositing a cap layer on the surface of the semiconductor layer and fusing and solidifying the semiconductor layer by radiant heating from above the cap layer to form the polycrystalline semiconductor layer, and a step of removing the cap layer.
申请公布号 US5584941(A) 申请公布日期 1996.12.17
申请号 US19950406157 申请日期 1995.03.17
申请人 CANON KABUSHIKI KAISHA 发明人 NISHIDA, SHOJI
分类号 H01L31/0392;H01L31/072;H01L31/0745;H01L31/18;(IPC1-7):H01L31/039;H01L31/036;H01L31/06 主分类号 H01L31/0392
代理机构 代理人
主权项
地址
您可能感兴趣的专利