NONVOLATILE RANDOM ACCESS MEMORY AND ITS MANUFACTURE

摘要

PURPOSE: To prevent deterioration and removal caused since a capacitor ferroelectric film comes into direct contact with a layer insulation film such as an SiO2 film, an NSG film or a BPSG film by coating at least a lower electrode of a ferroelectric capacitor and a side wall of a capacitor ferroelectric film with a lamination film of a diffusion prevention film and an insulating thin film. CONSTITUTION: A lower electrode 7, a capacitor ferroelectric film 8 formed on the lower electrode 7 alone and an upper electrode 11 which functions as a drive line are laminated in a ferroelectric capacitor. The lower electrode 7 and a side wall of the capacitor ferroelectric film 8 are coated with a lamination film of a TiO2 film 9 and an SiO2 film 10 which has an opening on the capacitor ferroelectric film 8 and is formed all over from above the capacitor ferroelectric film 8 to above the layer insulation film 5. Since the TiO2 film 9 is provided between the capacitor ferroelectric film 8 and the SiO2 films 10 and 12 to prevent them from coming into contact with each other, the capacitor ferroelectric film 8 does not deteriorate and peel.