| 摘要 |
High withstand voltage, low on-voltage, low turn-off loss, and high switching speed are realized in semiconductor bidirectional switches in which the potential of the substrate is floating. A switch has a p-type substrate without an electrode, and an n-layer on the substrate. At least one pair of p-well regions and at least one p-region are formed in a surface layer of the n-layer. An n+ region is formed in the p-well region, and a gate electrode is fixed via an insulation film to the p-well region. A main electrode is fixed to a part of the surface of the n+ region and the surface of a p+ contact region in the p-well region.
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