| 摘要 |
PURPOSE: To prevent deterioration of insulation property of a layer insulation film when a storage electrode is prepared. CONSTITUTION: A silicon oxide film 14, a silicon nitride film 15 and a silicon oxide film 16 are formed on a semiconductor substrate 11, an opening part 23 is provided by etching, a polycrystalline silicon film 17 is formed, a storage electrode 17a is formed by patterning and a side surface and a rear side of the storage electrode 17a are exposed by etching a silicon oxide film 16a. |
