SEMICONDUCTOR STRUCTURE USING HIGH-DIELECTRIC-CONSTANT MATERIAL AND BONDING LAYER, AND FORMING METHOD OF THIS STRUCTURE

摘要

PROBLEM TO BE SOLVED: To release an antioxidant electrode from dielectric layer for avoiding extreme deterioration or breakdown of an element by arranging an inner electrode on a neighboring, section of the outer surface of an interlevel separating layer. SOLUTION: An electronic element containing an active region 14 formed on a silicon substrate 12 is formed. A conductive plug 20 arranged outside the active region 14 comes into contact with a part of the active region 14. An interlevel separating layer 18 covers the remaining parts. A barrier layer 22 is arranged outside the conductive plug 20. An antioxidant inner electrode 24 is formed outside the interlevel separating layer 18 and a part of the barier 22. An adhesive layer 22 is arranged between the antioxidant inner electrode 24, the interlevel separating layer 18 and the barrier layer 22. A high dielectric constant layer 28 is arranged outside the antioxidant inner electrode 24. An outer electrode 30 is arranged outside the high dielectric constant layer 28. Through these procedures, the element structure resolving the adhesion problem between the antioxidant layer and the interlayer isolation layer can be formed.