Transverse diffusion barrier interconnect structure

摘要

The invention provides an interconnect line which comprises a metallization layer and a plurality of transverse diffusion barriers spaced within said metallization layer. The transverse diffusion barriers separate the length of metallization of the line into discrete sections, such that each section is only 20-50 microns in length. The diffusion barriers reduce electromigration and metal creep within the metal line, each of which can cause failure of the line. The invention further provides such an interconnect line formed within an insulator layer, for use in multi-level interconnect structures.