发明名称 |
Field-effect transistor and method of manufacturing the same |
摘要 |
On a semi-insulating substrate is formed a conductive layer and an undoped layer. On specified regions of the conductive layer are formed ohmic electrodes, each serving as a source electrode or a drain electrode, via a pair of square contact regions. The circumferential edges of the contact regions are undercut beneath the ohmic electrodes. Between the pair of contact regions on the conductive layer is formed a gate electrode by self alignment using the ohmic electrodes as a mask. The gate electrode has extended in the direction of gate width and the extended portion serves as a withdrawn portion of the gate electrode. Upper electrodes are formed by self alignment in the same process in which the gate electrode is formed.
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申请公布号 |
US5585655(A) |
申请公布日期 |
1996.12.17 |
申请号 |
US19950517435 |
申请日期 |
1995.08.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OTA, YORITO;NISHII, KATSUNORI;NISHITSUJI, MITSURU;MASATO, HIROYUKI;FUJIMOTO, HIROMASA |
分类号 |
H01L21/335;H01L29/10;H01L29/47;H01L29/812;(IPC1-7):H01L29/80 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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