| 摘要 |
In accordance with the present invention, a polishing pad useful for polishing a semiconductor-comprising substrate is disclosed. The polishing pad is constructed to include conduits which pass through at least a portion of and preferably through the entire thickness of the polishing pad. The conduits, preferably tubulars, are constructed from a first material which is different from a second material used as a support matrix. The conduits are positioned within the support matrix such that the longitudinal centerline of the conduit forms an angle ranging from about 60 DEG to about 120 DEG with the working surface of the polishing pad. One preferred method of fabrication the polishing pad is pultrusion, where the tubulars are pulled through a resin bath to apply a coating of resin and then through a series of dies in which the resin is cured to provide a support matrix around the tubulars. The composite of tubulars and surrounding matrix, which Would typically be cylindrical in form with the tubulars perpendicular to the end faces of the cylinder, is then sliced into polishing pads of the desired thickness. A second method of forming the polishing pad is by casting or injection molding into a mold which has fibers or hollow fibers in place within the mold at the position in which an opening through the polishing pad matrix is desired. After the matrix has been cast or molded, the fibers are removed to create the openings through the matrix, or the hollow fibers are left in place to provide a conduit lining within the matrix material.
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