| 摘要 |
PURPOSE: To provide a semiconductor light emitting element, of which light emitting efficiency is improved by eliminating unnecessary light emission at the part where the light cannot be taken out to the outside without increasing the steps of epitaxial growth and taking out the emitted light to the outside efficiently. CONSTITUTION: In a semiconductor light emitting element of which light emitting layer 6 and current diffusing layer 5 are formed on a semiconductor substrate 1, one electrode 8 is formed partially on the front surface of current diffusing layer side and the other electrode 9 is formed on the major part of the back surface of the semiconductor substrate, the current diffusing layer or the semiconductor substrate under the part of the electrode formed on the front surface of the current diffusing layer side is removed and electrically insulating material 10 is provided in a cavity or a removed part. |
