发明名称 Semiconductor integrated circuit device
摘要 Protection lines are arranged on both sides of and above a signal line, and ground lines are formed outside the protection lines and a ground line is formed above the protection line. A bias circuit is connected to the signal line and protection lines to set the potential of the protection lines equal to that of the signal line and set the impedance of the protection lines low. The signal line processing a small signal, is surrounded by the low-impedance protection lines of the same potential as that of the signal line, and thus crosstalk can be prevented from occurring between the lines, without causing the components of a high-frequency analog signal to attenuate.
申请公布号 US5585664(A) 申请公布日期 1996.12.17
申请号 US19960595964 申请日期 1996.02.06
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO, TAKAO
分类号 H01L21/3205;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L23/552 主分类号 H01L21/3205
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