| 摘要 |
A solid-state imaging device which restrains the smear phenomenon effectively without reduction of the dielectric breakdown strength between the transfer electrode and the light shielding film. A first insulating film covers photoelectrical converting regions each of which receives incident light through the first insulation film to generate and store a signal charge. A second insulating film covering a charge transfer region is of a layered structure containing a first insulation layer with a relatively lower dielectric constant such as SiO2 and a second insulation layer with a relatively higher dielectric constant such as Si3N4. The distance between the transfer electrode and the light shielding film can be decreased, providing decrease in thickness of the first insulating film. The smear phenomenon is restrained effectively without reduction of the dielectric breakdown strength between the transfer electrode and the light shielding film.
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