发明名称 FERRITE LAMINATION THIN FILM AND ITS MANUFACTURING METHOD
摘要 PURPOSE: To achieve ferrite lamination thin film for indicating improved soft magnetic characteristics at a specific high-frequency region. CONSTITUTION: A feed gas is introduced into a reaction chamber 1 with an exhaust means, power is supplied between a substrate holder 3 and an electrode 4 being provided in the reaction chamber 1 for turning the feed gas into plasma, and ferrite lamination thin film is formed on a ground substrate 4 at 300 deg.C being retained at the substrate holder 3. First, a feed gas consisting ofβ- diketone complex gas of iron (Fe),β-diketone complex gas of cobalt (Co), carrier gas, and oxygen gas is introduce into a reaction chamber 1 to form Co ferrite layer. Then, a feed gas consisting ofβ-diketone complex gas of iron (Fe),β- diketone complex gas of nickel (Ni),β-diketone complex gas of zinc (Zn), carrier gas, and oxygen gas is introduced into the reaction chamber 1 to form Ni-Zn ferrite layer. The above two processes are performed alter nately.
申请公布号 JPH08335514(A) 申请公布日期 1996.12.17
申请号 JP19950141997 申请日期 1995.06.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJII AKIYUKI;TORII HIDEO;TAKAYAMA RYOICHI;TAMURA AKIYOSHI
分类号 H01F10/20;H01F41/16;H01F41/18;(IPC1-7):H01F10/20 主分类号 H01F10/20
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