CHEMICAL AMPLIFICATION POSITIVE TYPE RESIST MATERIAL

摘要

PURPOSE: To obtain a resist material having high sensitivity to high energy beams such as far UV, electron beams or X-rays, capable of forming a pattern by development with an aq. alkali soln. and fit to microfabrication technique. CONSTITUTION: This resist material contains polysiloxane (A) having terminal silanol groups each protected with a trimethylsilyl group and represented by the formula and an acid generating agent (B).