| 摘要 |
A photosensor formed on an insulating substrate has a transparent top gate electrode arranged on the upper side of a semiconductor layer for photoelectric conversion and a bottom gate electrode arranged on the lower side of the semiconductor layer. If light is applied from the top gate electrode side in a state in which a bottom gate voltage VBG=+20 V is applied to the bottom gate electrode and a top gate voltage VTG=-20 V is applied to the top gate electrode, electron-hole pairs are generated in the semiconductor layer and only the holes are held in the semiconductor layer by the effect of the top gate voltage VTG=-20 V. Therefore, an n-channel is formed in the semiconductor layer and a drain current IDS flows. It was confirmed that the drain current IDS will not flow even if illumination light is applied when the bottom gate voltage VBG is set at 0 V. Therefore, the selection or non-selection state of the photosensor can be controlled by the bottom gate voltage VTG.
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