| 摘要 |
An EPROM memory array and method of controlling the array. The array is divided into array segments, with each segment having alternating bit and source lines. Each segment includes several rows of cells, with each cell in the row having a control gate connected to the word line, a drain connected to one of the bit lines and a source connected to the source line adjacent the bit line. Pairs of cells in a row will have common sources connected to one of the source lines and respective drains connected to the two bit lines adjacent the source line. A selected cell is read utilizing a pair of segment select transistors which selectively connect a positive voltage to the bit line connected to the drain of the selected cell, with the source of the cell being grounded. The bit lines connected to the drains are thus selectively accessible and isolatable so that they need extend over only a single segment of the array. This results in a low capacitance bit line which can be rapidly switched between states during successive read operations thereby greatly increasing the speed of memory read operations.
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