发明名称 |
SINGLE MIRROR LIGHT-EMITTING DIODES WITH ENHANCED INTENSITY |
摘要 |
This invention embodies single mirror light-emitting diodes (LEDs) with enhanced intensity. The LEDs are Group III-V and/or II-IV compound semiconductor structures with a single metallic mirror. The enhanced intensity is obtained by placing an active region of the LED having from two to ten, preferably from four to eight, quantum wells at an anti-node of the optical node of the device created by a nearby metallic mirror. Such multiquantum well LED structures exhibit enhanced efficiencies approaching that of a perfect isotropic emitter.
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申请公布号 |
CA2101128(C) |
申请公布日期 |
1996.12.10 |
申请号 |
CA19932101128 |
申请日期 |
1993.07.22 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
HUNT, NEIL EDMUND JAMES;SCHUBERT, ERDMANN FREDERICK |
分类号 |
H01L33/06;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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