| 摘要 |
A method of making a semiconductor device wherein fluctuations of an effective length of the conduction area and placement thereof relative to source and drain regions is controlled during manufacture. A first insulation film is formed on a semiconductor substrate. A first thin film is formed on the first insulation film. A trench is formed below a surface of the substrate by etching said first thin film, first insulation film, and semiconductor substrate. A second insulation film is formed along an inside wall of the trench. A first electrically conductive film is formed along an inside wall of the second insulation film within the trench and an embedded electrode is formed within a space defined by said first electrically conductive film. The first thin film is removed and then impurities are introduced into the substrate using the first electrically conductive film as a mask so as to form source and drain with the gate trench being automatically centered between the source and drain region, and a fluctuation of an effective length of a conduction region is avoided.
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