发明名称 |
Storage cell using low powered/low threshold CMOS pass transistors having reduced charge leakage |
摘要 |
A storage cell includes a first bit line, a storage circuit, and a pass transistor. The storage circuit has a first storage node for holding a logic state indicative of a logic value. The pass transistor is coupled to the first bit line and the first storage node for establishing a conduction path therebetween. The pass transistor receives a bias voltage to switch the pass transistor into a substantially nonconducting state when the storage cell is not being accessed. The reverse bias on the first transistor substantially reduces the leakage current through the pass transistor.
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申请公布号 |
US5583821(A) |
申请公布日期 |
1996.12.10 |
申请号 |
US19950509599 |
申请日期 |
1995.07.31 |
申请人 |
SUN MICROSYSTEMS, INC. |
发明人 |
ROSE, JAMES W.;D'SOUZA, GODFREY P.;STINEHELFER, JONATHAN J.;TESTA, JAMES F. |
分类号 |
G11C11/412;G11C11/404;G11C11/407;G11C11/418;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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