Apparatus and method for producing single crystal using Czochralski technique

摘要

A puller and method for crystal growth using the Czochralski technique in which a temperature profile and a history of thermal conditions of a growing crystal 2 is controllable with ease and a good accuracy, which puller comprises a crucible 3 containing raw material, heater 4 for melting by heating the raw material and a heat insulating cylinder 5 surrounding them, the heat insulating cylinder 5 being cross-sectionally divided by an annular separation gap or gaps 8 into parts I, II, III, and which method is applicable to growth of such a single crystal as of silicon, germanium, GaP, GaAs or InP in the puller. Methods for controlling a temperature profile and a history of thermal conditions of a growing crystal using the czochralski technique in the puller.