| 摘要 |
A color semiconductor display device in which optoelectronic elements capable of emitting/absorbing light of different predetermined wavelengths in the visible wavelength range (e.g. red, green, blue) are formed on a common substrate and comprise similar alloy compositions which are lattice matched to the substrate material. The alloy is preferably a III-V nitride alloy lattice matched to Si or GaP substrate material. In the disclosed embodiment, a color display device comprises a silicon or GaP substrate with an array of pixels, each being formed by a group of three (red, green, blue) color sub-pixels provided on the substrate. The pixels are formed of InAINSb alloy, with a quantum well regions of InNSb and barrier regions of AINSb, or are formed of AIGaAsSbN alloy, with quantum well regions of GaAsN and barrier regions of AINSb. Tuning of the wavelength emission/absorption characteristics of the sub-pixels is by doping of the quantum well material with aluminum and/or by quantum confinement.
|
