| 发明名称 |
Gallum nitride group compound semiconductor laser diode |
| 摘要 |
A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (AlxGa1-x)yIn1-yN, inclusive of 0</=x</=1 and 0</=y</=1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (AlxGa1-x)yIn1-yN, inclusive of 0</=x</=1 and 0</=y</=1 . In another embodiment, the active layer (5) is doped with silicon (Si).
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| 申请公布号 |
US5583879(A) |
申请公布日期 |
1996.12.10 |
| 申请号 |
US19950423946 |
申请日期 |
1995.04.19 |
| 申请人 |
TOYODA GOSEI CO., LTD.;RESEARCH DEVELOPMENT;AKASAKI, ISAMU;AMANO, HIROSHI |
发明人 |
YAMAZAKI, SHIRO;KOIDE, NORIKATSU;MANABE, KATSUHIDE;AKASAKI, ISAMU;AMANO, HIROSHI |
| 分类号 |
H01S5/30;H01S5/323;(IPC1-7):H01S3/18;H01L3/00 |
主分类号 |
H01S5/30 |
| 代理机构 |
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