发明名称 |
HgCdTe S-I-S two color infrared detector |
摘要 |
A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.
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申请公布号 |
US5583338(A) |
申请公布日期 |
1996.12.10 |
申请号 |
US19940266396 |
申请日期 |
1994.06.27 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
GOODWIN, MICHAEL W. |
分类号 |
H01L31/113;(IPC1-7):H01L31/029;H01L31/09 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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