CAPACITOR MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE

摘要

The method comprises a storage electrode, a dielectric film and a plate electrode. The process of forming the storage electrode comprises the steps of: forming the first conducting layer(27) and the first epi-layer(28) on a semiconductor substrate(21); forming a micro island(29) on the first epi-layer; etching the first epi-layer using the micro island as an etching mask; forming an etching mask on the surface of the first epi-layer; removing the etching mask and the remained first epi-layer; forming a micro trench(31) by dry-etching the revealed first conducting layer; removing the etching mask; and separating the first conducting layer into a proper size.