发明名称 TECHNIQUE FOR RECONFIGURING A HIGH DENSITY MEMORY
摘要 A flexible technique for improving yield of manufacturing of high density of memory devices, such as flash EEPROM, involves reconfiguring an integrated memory array having a plurality of sectors (10) selected by an address decoder (11, 13) in response to an N bit field in an address (17). If defective sectors are detected in the array, it is partitioned to disable defective sectors by configuring a sector decoder (12) to prevent access to the defective sectors while maintaining sequential addressing remaining in the array. The step of partitioning includes configuring the sector decoder (12) to replace a defective sector in one half of the array by another sector in the other half of the array having N-m of the address bits in common with the defective sector when m is between 1 and N-1.
申请公布号 WO9638845(A1) 申请公布日期 1996.12.05
申请号 WO1995US06990 申请日期 1995.05.31
申请人 MACRONIX INTERNATIONAL CO., LTD.;LIOU, KONG-MOU;YIU, TOM, DANG-HSING;WAN, RAY-LIN;CHENG, YAO-WU;HUNG, CHUN-HSIUNG;LIN, TIEN-LER;HU, TING-CHUNG 发明人 LIOU, KONG-MOU;YIU, TOM, DANG-HSING;WAN, RAY-LIN;CHENG, YAO-WU;HUNG, CHUN-HSIUNG;LIN, TIEN-LER;HU, TING-CHUNG
分类号 G11C16/06;G11C8/08;G11C8/10;G11C8/12;G11C16/08;G11C29/00;G11C29/04;(IPC1-7):G11C7/00 主分类号 G11C16/06
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