发明名称 PLASMA ASSISTED CHEMICAL ETCHING FOR FABRICATING FLAT PANEL DISPLAYS
摘要 <p>A system for the formation of circuit patterns on a large flat panel display (78) using plasma assisted chemical etching to achieve a uniform or controllably non-uniform etch depth over the entire area of the display. An overlying film (60) is provided on a large flat panel display substrate (12) with a photolithographic mask (62) overlying the film and having a predetermined pattern of openings (64) therethrough. The substrate is placed adjacent a plasma etching tool which has a projected area which is smaller than the area of the surface of the substrate. The etching tool is scanned across the surface of the substrate to transfer the pattern of the photolithographic mask into the film on the surface thereof. Thereafter, the photolithographic mask is removed from the surface of the overlying film. It is desirable to determine thickness profile data for the overlying film, then generate a dwell time versus position map for the overlying film and remove material from the exposed regions of the overlying film according to the dwell time versus position map. The substrate may be glass and the film may be silicon in either the amorphous or polycrystalline states.</p>
申请公布号 WO9638254(A1) 申请公布日期 1996.12.05
申请号 WO1996US08036 申请日期 1996.05.30
申请人 HUGHES AIRCRAFT COMPANY 发明人 BOLLINGER, DAVID;NESTER, JIM
分类号 G03F1/20;G03F7/00;(IPC1-7):B23K10/00 主分类号 G03F1/20
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