SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To provide a semiconductor device which comprises an element isolation oxide film having a good upper flatness structure and to provide its manufacturing method. CONSTITUTION: When the thickness of a gate electrode layer 6 is designated as tG, a height tU up to the surface part of a maximum film thickness part in an element isolation film 4 from the surface of a gate insulating film 5 and an angleθi on the side of an acute angle formed by the surface of the element isolation film 4 with the surface of the gate insulating film are set within the following ranges:θi, tU|0<=θi<=56.6 deg., 0<=tU<=0.82 tG}.