| 摘要 |
PURPOSE: To obtain a semiconductor memory in which a novel static random access memory cell having reduced occupation area is fabricated on a semiconductor substrate. CONSTITUTION: The word line in a memory cell comprises a pair of word lines 11a, 11d extending along a first direction on the major surface of a semiconductor substrate while being spaced apart from each other. The gate 11b, 11c of insulated gate FET T1, T2 for driving extends longitudinally along the first direction on the major surface of a semiconductor substrate between the word lines 11a, 11d and a pair of load elements, i.e., insulated gate FETs, are arranged above the gates of the transistors T1, T2. Since the gate of a transistor, i.e., a load element, is arranged on each transistor T1, T2, the occupation area of memory cell can be reduced significantly. |
