| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve leakage current and refresh characteristics of an element and simplify steps, by locally implanting channel stop impurities into an inactive region utilizing a landing pad. SOLUTION: A field oxide film 23 is formed in an inactive region, and a diffusion layer is formed in an active region. A wiring layer is formed on the entire surface of a semiconductor substrate 21 having the diffusion layer formed thereon, and a photosensitive film pattern is formed on the wiring layer so as to cover part of the diffusion layer and edge parts of the field oxide film 23 adjacent thereto. The wiring layer is subjected to a patterning process with use of a photosensitive film pattern to form a landing pad 29. First channel stop impurities 31 are implanted into the entire surface of the resultant substrate having the landing pad 29 formed thereon, to thereby form a first channel stop impurity layer 33 in the substrate 21 under the field oxide film 23. Thereby leakage current and refresh characteristics can be improved and steps can be simplified.</p> |
