| 摘要 |
PURPOSE: To make it possible to form a gate wiring (word line) without using resist patterning, to reduce a memory cell, and to restrain the short channel effect of an access transistor. CONSTITUTION: A step-difference part 11a is formed along a region where wiring is to be formed, only in the part of a silicon substrate 11 which part serves as a memory cell region 100. After an element isolation region 12 and a gate oxide film 13 are formed, a polycrystalline silicon film is formed. A resist film is formed only in the part of the polycrystalline silicon film which part corresponds to a peripheral circuit region 200. By using the resist film as a mask, the polycrystalline silicon film is selectively eliminated. Thereby a gate wiring 14a is formed in the peripheral circuit region 200, and at the same time, a gate wiring (word line) 14b made of polycrystalline silicon is formed along the side wall part of the step-difference part 11a which is previously formed in the memory cell region 100. |
