| 摘要 |
PURPOSE: To obtain the title thin film solar cell with high photoelectric conversion efficiency by a method wherein a double layer of an n-type semiconductor layer and a window layer made of an absorption layer made of p-type semiconductor and a different kind of n-type semiconductor is formed in this order on a conductive substrate. CONSTITUTION: Molybdenum is sputtered on a blue glass 1a to manufacture a conductive substrate with a conductive layer 1b formed thereon. As for the material of a p-type semiconductor layer 2 to be formed on this conductive substrate, CuInSe2 three element alloy is selected. This CuInSe2 three element alloy layer is formed by heat treatment of selenium dispersed indium layer after the formation on a copper layer by disperse-plating. Next, a cadmium sulfide layer as an n-type semiconductor layer 3a is formed by liquid phase growing method on the p-type semiconductor layer 2. Later, a zinc selenate layer as an n-type semiconductor layer 3b is formed by resistance heating evaporation. Finally, an aluminum doped zinc oxide layer thin film as a window layer 4 is formed by sputtering so as to manufacture the title thin film solar cell. |
