| 摘要 |
<p>PURPOSE: To obtain good contact in N+a-Si/a-Si interface and to improve characteristics of TFT. CONSTITUTION: After an etching stopper (14) is patterned, slight etching for silicon oxide is performed so that a naturally oxidized film (13OX) of silicon produced on the surface of a-Si (13) exposed to air is removed. Moreover, a reaction product produced from water remaining after washing is removed. By this method, etching defects in a-Si (13) can be prevented and good contact on the interface of N+a-Si(15)/a-Si(13) can be obtd. Thus, the ON current characteristics, ON/OFF ratio and threshold characteristics are improved.</p> |
