| 摘要 |
PURPOSE: To accomplish a semiconductor device, on which 1/f noise can be reduced and a gate insulating film is not broken down, in good productivity. CONSTITUTION: After formation of a LOCOS insulating film 2 on a P-type silicon (100) substrate 1, fluorine ions of 1×10<12> to 1×10<14> /cm<2> are implanted into the surface of the substrate 1 before formation of a gate insulating film 3. Then, a gate insulating film 3 is formed, and at the same time, fluorine atoms 4 are diffused on the interface between the gate insulating film 3 and the substrate 1 by the heat treatment conducted when the gate insulating film 3 is formed. Then, a polysilicon gate electrode 5 is formed, arsenic ions are implanted for formation of an N-type source/drain region 6, and an annealing treatment is conducted at 900 deg.C for thirty minutes in a nitrogen gas atmosphere for activation of the source/drain region 6. As a result, a MOSFET, having the fluorine atoms 4 fixed to the interface of the gate insulating film 3 and the substrate 1, is manufactured.
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