发明名称 METHOD AND APPARATUS FOR PROJECTION EXPOSING
摘要 PURPOSE: To improve the resolution exceeding the diffraction limit by emitting the light from a light source to a mask, diffracting the pattern of the mask, diffracting the diffracted light through a projection optical system, and reproducing the pattern on a sample to be exposed. CONSTITUTION: A mask 1 is inserted between a projection optical system 2 and diffraction gratings A, B, and a diffraction grating C is inserted between the system 2 and a wafer 4. In this case, the gratings A, B, C are simultaneously phase gratings. The light R perpendicularly incident to the mask 1 is diffracted to zero order diffracted light R0, + primary diffraction light R1 and - primary diffracted light R1' on the mask surface. The light R0 arrives at a point A0 on the grating A, and the light diffracted in the - primary direction is diffracted to + primary direction at the point B0 on the grating B. Thereafter, it is diffracted at the point C0 on the grating C via the left end of the pupil 3 in±primary direction, and arrived at two points Q, P on the image surfaces.
申请公布号 JPH08316125(A) 申请公布日期 1996.11.29
申请号 JP19950121115 申请日期 1995.05.19
申请人 HITACHI LTD 发明人 RUDORUFU FUON BUNOO;FUKUDA HIROSHI
分类号 G03F7/20;B82B1/00;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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