| 摘要 |
PURPOSE: To obtain a semiconductor device which can prevent a tab short circuit, a chip short circuit and a short circuit between wires due to the destruction of a coating film caused by the thermal degradation of the coating film when a covered wire is used by a method wherein the shape of the corner part of a semiconductor chip in a part in which the covered wire is extended, that of the corner part of a tab or that of the corner part of a lead is relaxed. CONSTITUTION: The external terminal 2C of a semiconductor chip 2 mounted on a tab 3A and a lead 3 are connected by a covered wire 5 in which the surface of a metal wire 5A is covered with an insulator 5B, and the covered wire 5A and its connection parts are covered with a resin 6. In such a semiconductor device 1, the shape of the corner part of the semiconductor chip 2 in a part in which the covered wire 5 is extended, that of the corner part of the tab 3A or that of the corner part of the lead 3 is relaxed. For example, a tab 3A and a lead 3 are formed by a punching operation, and a chip 2 is mounted on the surface of the tab 3A in which a burr generated at a corner part by the punching operation does not protrude. In addition, the external terminal 2C of the chip 2 and the surface of the lead 3 in which a burr generated at a corner part by the punching operation does not protrude are connected by a covered wire 5. |
