| 摘要 |
<p>PURPOSE: To reduce a time for processing a sample wafer by a method without static elimination wherein, in a smaller range than an electrostatic attracting force during plasma processings hinders a detachment after processed and in a larger range than a floating by heat transfer gas pressure supplied to a reverse face of the sample ore is prevented, an effective attracting voltage is applied to an electrode. CONSTITUTION: In order to obtain an attracting pressure force being about 8 to 15×10<2> kgf/cm<2> by a DC power source 11 in an electrode 10, a voltage in a range of about -50 to -580V is applied between the electrode 10 and a wafer 13 via an insulation film 12. Further, a bias voltage is applied to the electrode 10 by an AC power source 15 to control incident energy on the wafer 13 of ions in plasma. At this time, a voltage applied by the DC power source 11 is within a range that it does not hinder a detachment from the electrode of the wafer 13 after the plasma processing or conveyance, and the wafer 13 does not float from the electrode 10 by heat transfer pressure introduced to a reverse face of the wafer 3. Thus, dielectricity processings after processed can be omitted to reduce a processing time per wafer.</p> |
