| 摘要 |
PURPOSE: To obtain a high performance GaN based blue and ultraviolet region semiconductor laser in which the resonator surface or the light. take-out surface can be formed conveniently. CONSTITUTION: By taking advantage of the fact that a resonator part made of a GaN based crystal material including clad layers 2, 3 sandwiching an active layer 1 while having a band gap larger than that of the active layer 1 and sandwiched by SiO2 masks 12 has lower grow rate on six specific crystal faces appearing when a GaN based crystal material is grown selectively into a hexagonal system crystal as compared with major face, two out of six specific crystal faces are paired and used as the resonator surface of a semiconductor laser. The resonator crystal forms a hexagonal system having the (0001) face or a face inclining by several degrees against the (0001) face as the major face. |
