Bipolarer Transistor mit isolierter Steuerelektrode und Verfahren zu dessen Herstellung

摘要

In an IGBT having a plurality of source regions (5) formed in a base region (4), the spacing (D) between the source regions (5) is adapted to be larger than twice the channel length (L). A high concentration region (14) can be formed in at least a portion of the base region (4) between the source regions (5) independently from the above measure. Other IGBTs are further disclosed: A 500-750 V IGBT having a channel width per unit area ranging from 140 cm-1 to 280 cm-1, a 1000-1500 V IGBT having a channel width per unit area ranging from 70 cm-1 to 150 cm-1, and a stripe cell IGBT having a source region (5) formed in only one side of the base region (4).