发明名称 |
Method and apparatus for hot carrier injection |
摘要 |
<p>The invention is directed to a memory cell with a floating gate and a method for charging the floating gate using channel-initiated secondary electron injection (CISEI). In the device of the present invention, a positive bias voltage of about 1.1 volts to about 3.3 volts is applied between the drain and the source when introducing charge onto the floating gate. A negative bias voltage of about -0.5 volts or more negative is applied to the substrate and the source. The drain substrate bias induces a sufficient amount of secondary hot electrons to be formed with a sufficient amount of energy to overcome the energy barrier between the substrate and the floating gate to charge the floating gate. <IMAGE></p> |
申请公布号 |
EP0744754(A2) |
申请公布日期 |
1996.11.27 |
申请号 |
EP19960303419 |
申请日期 |
1996.05.15 |
申请人 |
AT&T CORP. |
发明人 |
BUDE, JEFFREY DEVIN;PINTO, MARK RICHARD;O'CONNOR, KEVIN JOHN |
分类号 |
G11C17/00;G11C16/04;G11C16/10;G11C16/12;G11C16/34;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/06 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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