发明名称 Solid-state imaging device and method of manufacturing the same
摘要 When light enters a solid-state imaging device obliquely, the light passing an optical path which misses a photodiode part is gathered by a second microlens located in the lower part which directs the light more vertically. A convergent rate of the oblique incident light can be prevented from decreasing. In this way, a solid-state imaging device having high sensitivity ratio, less smear (stray light), and excellent image characteristics can be provided. A metal with a high melting point or a metal silicide film thereof is used as a photo-shielding film 7. After making the photo-shielding film thinner, a Boro-Phospho-Silicate-Glass (BPSG) film 6 is provided on the entire surface. Then, the second microlens 2 is directly formed on an element provided with a surface protective coating 5 comprising SiO2, SiON, or SiN, and on top of that, a color filter 4 and an intermediate transparent film 3 are formed, and then a first microlens 1 is formed thereon. The second microlens 2 located in the lower part is formed using a material having a larger refractive index than that of the intermediate transparent film 3 or the BPSG film 6. <IMAGE>
申请公布号 EP0744778(A1) 申请公布日期 1996.11.27
申请号 EP19950114081 申请日期 1995.09.08
申请人 MATSUSHITA ELECTRONICS CORPORATION 发明人 SANO, YOSHIKAZU;AOKI, HIROMITSU;SHIGETA, YOKO
分类号 H01L21/28;H01L27/14;H01L27/146;H01L27/148;H01L31/0216;H01L31/0232;H04N5/335;H04N5/359;H04N5/369;H04N5/372 主分类号 H01L21/28
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