| 摘要 |
PURPOSE:To obtain an optical recording medium which has low toxicity and good stability by forming a thin indium oxide film essentially consisting of an amorphous material as a recording layer on a substrate. CONSTITUTION:Metal indium is subjected as a material to be deposited by evaporation to reactive vapor deposition by a reactive vacuum deposition method, sputtering method, ion plating method, ion vapor deposition method or ion cluster beam method in an oxygen atmosphere kept under <=10<-2>mmHg vacuum degree and is thus deposited on a substrate kept at <=150 deg.C. The thin film of the amorphous indium oxide to be produced is formed at the film thickness ranging 200-2,000Angstrom . 850-350nm wavelength regions of a semiconductor laser, cannon flash lamp, gaseous argon laser and others are used for recording and writing on the thin film. The light transmittance of the amorphous material is confined to <=30%. The amorphous phase in the irradiated part is converted to the crystalline phase by the laser irradiation, by which the reflectivity in the irradiated part is increased. The optical writing with the low toxicity and the good stability is thereby enabled. |
