发明名称 |
Semiconductor device and method of fabricating same |
摘要 |
A semiconductor device including a layer formed without being affected by a stepped ground pattern and a method of fabricating the semiconductor device are disclosed. Cap portions (30) (insulating layers) formed over trenches (13) and covering doped polysilicon (5) have an inclined surface (26) which satisfies Y/X <5 where X is the length of the inclined surface (26) in a direction of the surface of a body (50) and Y is the height of the inclined surface (26) from the surface of the body (50). Formation of the insulating layers having the smooth inclined surface satisfying Y/X<5 permits a first main electrode to be formed nondefectively without being affected by the ground pattern including the insulating layers.
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申请公布号 |
US5578522(A) |
申请公布日期 |
1996.11.26 |
申请号 |
US19950565277 |
申请日期 |
1995.11.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKAMURA, KATSUMI;MINATO, TADAHARU;TOMINAGA, SHUUICHI;SHIOZAWA, KATSUOMI |
分类号 |
H01L21/331;H01L21/336;H01L29/417;H01L29/739;H01L29/745;H01L29/749;H01L29/78;(IPC1-7):H01L21/44;H01L21/48 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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