| 摘要 |
PCT No. PCT/DE93/00954 Sec. 371 Date Apr. 13, 1995 Sec. 102(e) Date Apr. 13, 1995 PCT Filed Oct. 7, 1993 PCT Pub. No. WO94/09517 PCT Pub. Date Apr. 28, 1994The invention relates to an infrared radiation absorption device, which can be unrestrictedly produced from CMOS technology methods and materials. The absorber structure according to the invention comprises a lower layer (1) with a low transmission coefficient, a central layer (2) with a high absorption coefficient and an upper, absorbing component (3) with a low reflection coefficient for the radiation to be absorbed and which is applied from above. The upper component can e.g. comprise depressions in the central layer, whose walls are coated with metal. The absorber structure is used in the inexpensive manufacture of integrated, thermal infrared detectors.
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