发明名称 |
Reduced column leakage during programming for a flash memory array |
摘要 |
A method for programing a cell in an array of flash memory cells connected to a bit line using hot-electron injection. In the method, a negative word line voltage is applied to unselected cells connected to the bit line to create a negative gate to source voltage in the unselected cells. The negative gate to source voltage in the unselected cells is provided to prevent overerased cells, or cells which have a negative threshold, from turning on to reduce bit line leakage current.
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申请公布号 |
US5579261(A) |
申请公布日期 |
1996.11.26 |
申请号 |
US19950426716 |
申请日期 |
1995.04.21 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RADJY, NADER;CLEVELAND, LEE E.;CHEN, JIAN;HOLLMER, SHANE C. |
分类号 |
G11C16/26;G11C16/34;(IPC1-7):G11C16/02 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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