发明名称 Method for creating gated filament structures for field emision displays
摘要 A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer, a metal gate layer positioned on a top surface of the insulating layer and a gate encapsulation layer positioned on a top surface of the metal gate layer. A plurality of gates are provided and define a plurality of apertures on the top of the insulating layer. A plurality of spacers are formed in the apertures at their edges on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and form a plurality of pores in the insulating layer. The pores are plated with a filament material to create a plurality of filaments. The pores can be overplated to create the plurality of filaments. The filaments are vertically self-aligned in the pores.
申请公布号 US5578185(A) 申请公布日期 1996.11.26
申请号 US19950383408 申请日期 1995.01.31
申请人 SILICON VIDEO CORPORATION 发明人 BERGERON, DAVID L.;MACAULAY, JOHN M.;BARTON, ROGER W.;MORSE, JEFFREY D.
分类号 H01J1/30;H01J1/304;H01J3/02;H01J9/02;H01J29/04;H01J31/12;(IPC1-7):C25D5/02 主分类号 H01J1/30
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