Method of making an aluminum containing interconnect without hardening of a sidewall protection layer

摘要

A method for manufacturing a semiconductor device, includes (a) dry-etching an aluminum-containing interconnecting layer, which is formed on a wafer, using reactive gas containing chlorine and/or chloride; (b) converting reactive gas, which contains a compound having at least a hydrogen atom, into a plasma at a temperature of 20 DEG to 150 DEG C. and removing remaining chlorine by activated hydrogen; and (c) converting oxygen-containing reactive gas into a plasma at a temperature of 20 DEG to 150 DEG C. and removing a resist layer chiefly by ashing. If the temperatures in the steps (b) and (c) are set to be low, there would be no obstacle in removing a sidewall protection layer formed by etching the aluminum-containing interconnecting layer.